Theoretical Study of nano-Copper/Polyimide Composite

Michael B. Sullivan, Zhang Jia, Wu Ping, Zheng Jianwei, Zhu Baoku and Xu Zhikang

Contribution Institute of High Performance Computing, Singapore 2 Institute of Polymer Science, Zhejiang University, P. R. China

Presented: 9th International Conference on Advanced Materials 2005 & 3rd International Conference on Materials for Advanced Technologies 2005, Singapore, 3-8 July 2005.

ABSTRACT:

A typical electronic system contains passive components (passives), like resistors, inductors and capacitors, and active integrated circuits (ICs). The number of discrete passives outnumbers ICs by several times and occupying more than 70% real estate of substrate. Discrete passives have already become the major barrier of the miniaturization of electronic system. Integration of passives is the trend of developing the next generation electronics systems. Because of the large amount of capacitors, integration of capacitors is of much importance. At the same time, the development of microelectronics requires decoupling capacitor with higher capacitance and shorter distance from its serving components. All of these call for new dielectric materials with high dielectric constant.

Nano-metal/polyimide (PI) composite is a promising dielectric material. However, oxidation of nano-metal particles is a major problem. Experiments have found that nano-Cu particles in nano-Cu/PI composite were easily oxidized a week after making them.

In this study, ab-initio modeling (density functional theory method) was utilized to study nano-Cu/PI composite. The oxidation mechanism of nano-Cu particles was elucidated and possible solutions were discussed.

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